- Product Name: SemiSiC 8-inch SiC Wafer Substrate, Unopened - Material: Silicon Carbide Wafer / 8 Inch N-type SiC Substrate - Size: Approximately 150mm in diameter - Quantity: 2 pieces/box - Application: Semiconductor manufacturing, evaluation, etc. - Condition: New (Clean condition) Surface orientation: 4° toward <11-20> ±0.2º Resistivity: 0.015~0.025 ohm/cm Diameter mm: 200.0 ±0.2mm Thickness μm: 350 ±25μm Notch orientation: [1-100] ±1° Notch depth: 1~1.25mm Notch angle: 90+5/-1° LTV: ≤2μm (10mm*10mm) TTV: ≤5μm Bow: -20μm~20μm Warp: ≤25μm Micropipe density: <0.1 ea/cm2 Metal impurities: None BPD: ≤800 ea/cm2 TSD: ≤30 ea/cm2 SF (2mm*2mm): ≤1% TUA (2mm*2mm): ≥98% Front: Si Surface Finish: ≤60 (size ≥0.3μm) Particles: ≤60 (size ≥0.3μm) Scratches: ≤5, Total Length ≤1/2*Diameter Back finish: C-face polished Scratches: ≤5, Total Length ≤Diameter Edge: Chamfer Packaging: Nitrogen/vacuum